polarization hysteresis curve measurement for an au/pzt/ybco device by double pulse technique

POLARIZATION HYSTERESIS CURVE MEASUREMENT FOR AN Au/PZT/YBCO DEVICE BY DOUBLE PULSE TECHNIQUE

Polarization for Au/Pb(Zr Ti )O /YBa Cu O ferroelectric capacitor has been studied and measured by pulse method. A sequence of pulses with amplitudes varying from 0 to 10 volts in 2 volt steps is applied and a conventional polarization curve is obtained by integrating the charge flow from the polarization switching induced by the voltage ramp. A value of 25?C/cm2 is measured for the satur...

Highly simplified device for ultrashort-pulse measurement.

We show that a frequency-resolved optical gating device using (1) a thick nonlinear crystal to replace the usual thin crystal and spectrometer and (2) a Fresnel biprism to replace the beam splitter and delay line yields a remarkably simple single-shot ultrashort-pulse intensity-and-phase measurement device with no sensitive alignment parameters and significantly greater sensitivity.

The Differentiating Polarization Curve Technique for the Tafel Parameter Estimation

An experimentally obtained polarization curve for the hydrogen evolution reaction on silver in a 0.5 mol dm−3 solution was investigated using an electrochemical curve technique named the differential polarization method (DPM). The exchange current density estimated by the Tafel extrapolation method (TEM) and the DPM were compared and assessed from points of simple and more accurate handling. It...

On the Transmission Line Pulse Measurement Technique

Transmission Line Pulse is a short pulse (25ns to 150ns) measurement of the current-voltage (I/V) characteristics of the ESD protection built into an integrated circuit. The short TLP pulses are used to simulate the short ESD pulse threats and integrated circuit must tolerate without being damaged. In this work the fundamental principles of how the TLP pulse is generated and used to create I-V ...

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k d...

Single Pulse Emittance Measurement Technique for Intense Relativistic Electron Beams